There are no models available for this part yet.
Overview of IS46DR86400E-25DBLA1 by Integrated Silicon Solution Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Price & Stock for IS46DR86400E-25DBLA1 by Integrated Silicon Solution Inc
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
IS46DR86400E-25DBLA1
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Avnet Silica | DRAM Chip DDR2 SDRAM 512Mbit 64M X 8 1.8V 60-Pin TWBGA Tray (Alt: IS46DR86400E-25DBLA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
CAD Models for IS46DR86400E-25DBLA1 by Integrated Silicon Solution Inc
Part Data Attributes for IS46DR86400E-25DBLA1 by Integrated Silicon Solution Inc
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|---|---|
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
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INTEGRATED SILICON SOLUTION INC
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Package Description
|
TFBGA,
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8542.32.00.28
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Date Of Intro
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2017-06-23
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Access Mode
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FOUR BANK PAGE BURST
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Access Time-Max
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0.4 ns
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Additional Feature
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AUTO/SELF REFRESH
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JESD-30 Code
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R-PBGA-B60
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Length
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10.5 mm
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Memory Density
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536870912 bit
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Memory IC Type
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DDR2 DRAM
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Memory Width
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8
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Number of Functions
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1
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Number of Ports
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1
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Number of Terminals
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60
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Number of Words
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67108864 words
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Number of Words Code
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64000000
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Operating Mode
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SYNCHRONOUS
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Operating Temperature-Max
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85 °C
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Operating Temperature-Min
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-40 °C
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Organization
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64MX8
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Package Body Material
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PLASTIC/EPOXY
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Package Code
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TFBGA
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Package Shape
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RECTANGULAR
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Package Style
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GRID ARRAY, THIN PROFILE, FINE PITCH
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Seated Height-Max
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1.2 mm
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Self Refresh
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YES
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Supply Voltage-Max (Vsup)
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1.9 V
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Supply Voltage-Min (Vsup)
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1.7 V
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Supply Voltage-Nom (Vsup)
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1.8 V
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Surface Mount
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YES
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Technology
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CMOS
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Temperature Grade
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INDUSTRIAL
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Terminal Form
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BALL
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Terminal Pitch
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0.8 mm
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Terminal Position
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BOTTOM
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Width
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8 mm
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Alternate Parts for IS46DR86400E-25DBLA1
This table gives cross-reference parts and alternative options found for IS46DR86400E-25DBLA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS46DR86400E-25DBLA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4T51083QQ-BCF70 | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | IS46DR86400E-25DBLA1 vs K4T51083QQ-BCF70 |
| W9751G8KB-25 | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, WBGA-60 | Winbond Electronics Corp | IS46DR86400E-25DBLA1 vs W9751G8KB-25 |
| NT5TU64M8FE-AC | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, VFBGA-60 | Nanya Technology Corporation | IS46DR86400E-25DBLA1 vs NT5TU64M8FE-AC |
| MT47H64M8CF-25E:H | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | IS46DR86400E-25DBLA1 vs MT47H64M8CF-25E:H |
| H5PS5182GFR-S6C-R | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | IS46DR86400E-25DBLA1 vs H5PS5182GFR-S6C-R |
| MT47H64M8CF-25E:GTR | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | IS46DR86400E-25DBLA1 vs MT47H64M8CF-25E:GTR |
| K4T51083QN-BIF70 | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60 | Samsung Semiconductor | IS46DR86400E-25DBLA1 vs K4T51083QN-BIF70 |
| MT47H64M8CF-25EIT:GTR | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | IS46DR86400E-25DBLA1 vs MT47H64M8CF-25EIT:GTR |
| K4T51083QN-BIE70 | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60 | Samsung Semiconductor | IS46DR86400E-25DBLA1 vs K4T51083QN-BIE70 |
| K4T51083QN-BCE70 | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60 | Samsung Semiconductor | IS46DR86400E-25DBLA1 vs K4T51083QN-BCE70 |