Datasheets
K4T51083QN-BIE70 by: Samsung Semiconductor

DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60

Part Details for K4T51083QN-BIE70 by Samsung Semiconductor

Overview of K4T51083QN-BIE70 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for K4T51083QN-BIE70

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K4T51083QN-BIE70 Part Data Attributes

K4T51083QN-BIE70 Samsung Semiconductor
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K4T51083QN-BIE70 Samsung Semiconductor DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60
Part Life Cycle Code Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description VFBGA,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
Length 9.5 mm
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 64MX8
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max 1 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 7.5 mm

Alternate Parts for K4T51083QN-BIE70

This table gives cross-reference parts and alternative options found for K4T51083QN-BIE70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T51083QN-BIE70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4T51083QN-BIF70 DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor K4T51083QN-BIE70 vs K4T51083QN-BIF70
K4T51083QN-BCE70 DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor K4T51083QN-BIE70 vs K4T51083QN-BCE70
Part Number Description Manufacturer Compare
K4T51083QQ-BCF70 DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor K4T51083QN-BIE70 vs K4T51083QQ-BCF70
W9751G8KB-25 DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, WBGA-60 Winbond Electronics Corp K4T51083QN-BIE70 vs W9751G8KB-25
NT5TU64M8FE-AC DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, VFBGA-60 Nanya Technology Corporation K4T51083QN-BIE70 vs NT5TU64M8FE-AC
MT47H64M8CF-25E:H DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4T51083QN-BIE70 vs MT47H64M8CF-25E:H
H5PS5182GFR-S6C-R DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 SK Hynix Inc K4T51083QN-BIE70 vs H5PS5182GFR-S6C-R
MT47H64M8CF-25E:GTR DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4T51083QN-BIE70 vs MT47H64M8CF-25E:GTR
K4T51083QN-BIF70 DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor K4T51083QN-BIE70 vs K4T51083QN-BIF70
MT47H64M8CF-25EIT:GTR DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc K4T51083QN-BIE70 vs MT47H64M8CF-25EIT:GTR
K4T51083QN-BCE70 DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor K4T51083QN-BIE70 vs K4T51083QN-BCE70
A3R12E30CBF-8EA DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Zentel Electronics Corp K4T51083QN-BIE70 vs A3R12E30CBF-8EA

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