Memory
IS45S16400E-6TLA1
Description: 4MX16 SYNCHRONOUS DRAM, 5ns, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54

Overview of IS45S16400E-6TLA1 by ABLIC Inc.

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Part Data Attributes for IS45S16400E-6TLA1 by ABLIC Inc.

IS45S16400E-6TLA1
ABLIC Inc.
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
SEIKO INSTRUMENTS USA INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
54
Reach Compliance Code
unknown
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G54
JESD-609 Code
e3
Length
22.22 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
4MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. IS45S16400E-6TLA1
    ABLIC Inc.
    4MX16 SYNCHRONOUS DRAM, 5ns, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54
    VS

Alternate Parts for IS45S16400E-6TLA1

This table gives cross-reference parts and alternative options found for IS45S16400E-6TLA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS45S16400E-6TLA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S641632H-UC600 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 Samsung Semiconductor IS45S16400E-6TLA1 vs K4S641632H-UC600
K4S641632K-TP600 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor IS45S16400E-6TLA1 vs K4S641632K-TP600
W986416DH-6 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Winbond Electronics Corp IS45S16400E-6TLA1 vs W986416DH-6
VG36641641DTL-5L Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Vanguard International Semiconductor Corporation IS45S16400E-6TLA1 vs VG36641641DTL-5L
K4S641632N-LP600 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT AND HALOGEN FREE, TSOP2-54 Samsung Semiconductor IS45S16400E-6TLA1 vs K4S641632N-LP600
K4S641632E-TL550 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor IS45S16400E-6TLA1 vs K4S641632E-TL550
K4S641632H-UL600 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 Samsung Semiconductor IS45S16400E-6TLA1 vs K4S641632H-UL600
HY57V641620HGT-55I Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc IS45S16400E-6TLA1 vs HY57V641620HGT-55I
HY57V641620HGLT-55 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc IS45S16400E-6TLA1 vs HY57V641620HGLT-55
HY57V641621TC-7 Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc IS45S16400E-6TLA1 vs HY57V641621TC-7
Part Number Description Manufacturer Compare
HYB39S256160T-8B Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Siemens IS45S16400E-6TLA1 vs HYB39S256160T-8B
HM5225805BTT-75 Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Hitachi Ltd IS45S16400E-6TLA1 vs HM5225805BTT-75
HM5264165FTT-B60 Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Hitachi Ltd IS45S16400E-6TLA1 vs HM5264165FTT-B60
HM5225805BTT-B6 Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Hitachi Ltd IS45S16400E-6TLA1 vs HM5225805BTT-B6
MT48LC4M16A2-8EIT 4MX16 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Micron Technology Inc IS45S16400E-6TLA1 vs MT48LC4M16A2-8EIT
V54C3256804VAT-7 32MX8 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation IS45S16400E-6TLA1 vs V54C3256804VAT-7
HYB39S256400FEL-7 Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, GREEN, PLASTIC, TSOP2-54 Infineon Technologies AG IS45S16400E-6TLA1 vs HYB39S256400FEL-7
HYB39S256800FEL-7 Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, GREEN, PLASTIC, TSOP2-54 Infineon Technologies AG IS45S16400E-6TLA1 vs HYB39S256800FEL-7
HYB3165165TL-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO54 Siemens IS45S16400E-6TLA1 vs HYB3165165TL-50
IS42S16400E-7T 4MX16 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, TSPO2-54 ABLIC Inc. IS45S16400E-6TLA1 vs IS42S16400E-7T

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