Datasheets
IS42VM32400E-75BLI by: Integrated Silicon Solution Inc

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

Part Details for IS42VM32400E-75BLI by Integrated Silicon Solution Inc

Overview of IS42VM32400E-75BLI by Integrated Silicon Solution Inc

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Applications Computing and Data Storage Energy and Power Systems

Price & Stock for IS42VM32400E-75BLI

Part # Distributor Description Stock Price Buy
DISTI # IS42VM32400E-75BLI-ND
DigiKey IC DRAM 128MBIT PAR 90TFBGA Lead time: 12 Weeks Container: Tray Limited Supply - Call
Buy Now
Chip 1 Exchange INSTOCK 11272
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Part Details for IS42VM32400E-75BLI

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IS42VM32400E-75BLI Part Data Attributes:

IS42VM32400E-75BLI Integrated Silicon Solution Inc
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IS42VM32400E-75BLI Integrated Silicon Solution Inc Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code DSBGA
Package Description TFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.000015 A
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for IS42VM32400E-75BLI

This table gives cross-reference parts and alternative options found for IS42VM32400E-75BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42VM32400E-75BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS45VM32400E-75BLA2 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42VM32400E-75BLI vs IS45VM32400E-75BLA2
IS45VM32400E-75BLA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42VM32400E-75BLI vs IS45VM32400E-75BLA1
MT48H4M32LFB5-75IT:K Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc IS42VM32400E-75BLI vs MT48H4M32LFB5-75IT:K
EDS12322GBH-6DTT-F Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Elpida Memory Inc IS42VM32400E-75BLI vs EDS12322GBH-6DTT-F
IS42VM32400E-75BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42VM32400E-75BLI vs IS42VM32400E-75BL
Part Number Description Manufacturer Compare
K4M56323LE-EC1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor IS42VM32400E-75BLI vs K4M56323LE-EC1H0
K4S283233E-FN1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor IS42VM32400E-75BLI vs K4S283233E-FN1L0
EDS2732CABJ-1A-E Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Elpida Memory Inc IS42VM32400E-75BLI vs EDS2732CABJ-1A-E
MT46H8M32LFB5-5IT:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc IS42VM32400E-75BLI vs MT46H8M32LFB5-5IT:H
K4M28323LH-HG750 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42VM32400E-75BLI vs K4M28323LH-HG750
K4S28323LE-FS1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor IS42VM32400E-75BLI vs K4S28323LE-FS1H0
HY5W2A2LF-P Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc IS42VM32400E-75BLI vs HY5W2A2LF-P
K4M563233G-FN750 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS42VM32400E-75BLI vs K4M563233G-FN750
K4M56323LE-EE800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor IS42VM32400E-75BLI vs K4M56323LE-EE800
IS42S32800B-7BLI Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc IS42VM32400E-75BLI vs IS42S32800B-7BLI

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