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Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70017850
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RS | Power MOSFET, N-Ch, VDSS 55V, RDS(ON) 0.06Ohm, ID 18A, D2Pak, PD 45W, VGS+/-16V, Qg 15nC | Infineon IRLZ24NSTRLPBF RoHS: Not Compliant Min Qty: 16 Package Multiple: 1 Container: Bulk | 0 |
|
$1.0000 / $1.2500 | RFQ |
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Bristol Electronics | 481 |
|
RFQ | ||
|
Rochester Electronics | IRLZ24NS - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 9769 |
|
$0.4321 / $0.5084 | Buy Now |
DISTI #
IRLZ24NSTRLPBF
|
TME | Transistor: N-MOSFET, unipolar, 55V, 18A, 45W, D2PAK Min Qty: 800 | 0 |
|
$0.4220 | RFQ |
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LCSC | 55V 18A 60m11A10V 2V250uA 1PCSNChannel D2PAK MOSFETs ROHS | 14 |
|
$0.5581 / $1.0311 | Buy Now |
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IRLZ24NSTRLPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRLZ24NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 68 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |