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Transistors Power Field-Effect Transistors IRLR8256TRPBF

IRLR8256TRPBF
Description: Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

Overview of IRLR8256TRPBF by Infineon Technologies AG

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Price & Stock for IRLR8256TRPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 13AC9243
Newark Mosfet, N-Ch, 25V, 81A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:81A, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.0042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Rohs Compliant: Yes |Infineon IRLR8256TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # IRLR8256TRPBF
TME Transistor: N-MOSFET, unipolar, 25V, 81A, 63W, DPAK Min Qty: 2000 0
  • 2,000 $0.3630
$0.3630 RFQ
LCSC DPAK MOSFETs ROHS 11
  • 1 $0.3045
  • 10 $0.2435
  • 30 $0.2174
  • 100 $0.1847
  • 500 $0.1702
  • 1,000 $0.1615
$0.1615 / $0.3045 Buy Now
Win Source Electronics MOSFET N-CH 25V 81A DPAK / Trans MOSFET N-CH 25V 81A 3-Pin(2+Tab) DPAK T/R 68000
  • 75 $0.7070
  • 175 $0.5800
  • 270 $0.5620
  • 370 $0.5440
  • 480 $0.5260
  • 640 $0.4710
$0.4710 / $0.7070 Buy Now

CAD Models for IRLR8256TRPBF by Infineon Technologies AG
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Part Data Attributes for IRLR8256TRPBF by Infineon Technologies AG
Parametric Data

IRLR8256TRPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
52 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
86 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
25 V
Drain Current-Max (ID)
81 A
Drain-source On Resistance-Max
0.0057 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
63 W
Pulsed Drain Current-Max (IDM)
325 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRLR8256TRPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
    VS

Alternate Parts for IRLR8256TRPBF

This table gives cross-reference parts and alternative options found for IRLR8256TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR8256TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRLR8256TRPBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRPBF
IRLR8256TRRPBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRRPBF
IRLR8256PBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256PBF
IRLR8256PBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG IRLR8256TRPBF vs IRLR8256PBF
IRLR8256 Power Field-Effect Transistor, TO-252AA, PLASTIC, DPAK-3 Infineon Technologies AG IRLR8256TRPBF vs IRLR8256
IRLR8256TRR Power Field-Effect Transistor, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRR
IRLR8256TRL Power Field-Effect Transistor, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRL
IRLR8256TRLPBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRLPBF
Part Number Description Manufacturer Compare
IRLR8256PBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256PBF
IRLR8713TRRPBF Power Field-Effect Transistor, 100A I(D), 25V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8713TRRPBF
IRLR8256TRPBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRPBF
IRLR8256TRRPBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRRPBF
IRLR8256PBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG IRLR8256TRPBF vs IRLR8256PBF
IRLR8713TRLPBF Power Field-Effect Transistor, 100A I(D), 25V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8713TRLPBF
IRLR8711CPBF Power Field-Effect Transistor, 84A I(D), 25V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN International Rectifier IRLR8256TRPBF vs IRLR8711CPBF
IRLR8256 Power Field-Effect Transistor, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256
IRLR8256TRL Power Field-Effect Transistor, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRL
IRLR8256TRLPBF Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR8256TRPBF vs IRLR8256TRLPBF

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