Datasheets
IRLML6302GTRPBF by:

Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

Part Details for IRLML6302GTRPBF by International Rectifier

Overview of IRLML6302GTRPBF by International Rectifier

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for IRLML6302GTRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   851
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Part Details for IRLML6302GTRPBF

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IRLML6302GTRPBF Part Data Attributes:

IRLML6302GTRPBF International Rectifier
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Compare Parts:
IRLML6302GTRPBF International Rectifier Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOT-23
Package Description LEAD FREE, MICRO-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.78 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 28 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 0.54 W
Power Dissipation-Max (Abs) 0.54 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLML6302GTRPBF

This table gives cross-reference parts and alternative options found for IRLML6302GTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6302GTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLML6302GTRPBF Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6302GTRPBF vs IRLML6302GTRPBF
IRLML6302GPBF Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6302GTRPBF vs IRLML6302GPBF
UT6302G-AE3-R Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd IRLML6302GTRPBF vs UT6302G-AE3-R
IRLML6302TRPBF Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 Infineon Technologies AG IRLML6302GTRPBF vs IRLML6302TRPBF
IRLML6302GPBF Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 International Rectifier IRLML6302GTRPBF vs IRLML6302GPBF
Part Number Description Manufacturer Compare
IRLML6302GPBF Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6302GTRPBF vs IRLML6302GPBF
IRLML6302GPBF Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 International Rectifier IRLML6302GTRPBF vs IRLML6302GPBF
UT6302G-AE3-R Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd IRLML6302GTRPBF vs UT6302G-AE3-R
IRLML6302TRPBF Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 Infineon Technologies AG IRLML6302GTRPBF vs IRLML6302TRPBF
IRLML6302GTRPBF Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6302GTRPBF vs IRLML6302GTRPBF

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