Part Details for IRLD014PBF by Vishay Siliconix
Overview of IRLD014PBF by Vishay Siliconix
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLD014PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRLD014PBF-ND
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DigiKey | MOSFET N-CH 60V 1.7A 4DIP Min Qty: 1 Lead time: 20 Weeks Container: Tube |
4333 In Stock |
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$0.6204 / $1.5000 | Buy Now |
DISTI #
70459627
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RS | MOSFET N-CH 60V 1.7A 4-DIP | Siliconix / Vishay IRLD014PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$0.8900 / $1.0400 | RFQ |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 600 |
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RFQ | |
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New Advantage Corporation | Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 11800 |
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$0.7000 / $0.7500 | Buy Now |
Part Details for IRLD014PBF
IRLD014PBF CAD Models
IRLD014PBF Part Data Attributes:
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IRLD014PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRLD014PBF
Vishay Siliconix
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVMDIP-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | DIP | |
Package Description | IN-LINE, R-PDIP-T4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 490 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 1.7 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T4 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLD014PBF
This table gives cross-reference parts and alternative options found for IRLD014PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLD014PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLD014 | Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, 4 PIN | International Rectifier | IRLD014PBF vs IRLD014 |
IRLD014PBF | Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4 PIN | Vishay Intertechnologies | IRLD014PBF vs IRLD014PBF |