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Transistors / Power Field-Effect Transistors / IRL520NPBF
Datasheets
IRL520NPBF by:
Infineon Technologies AG
EBV Chips
Infineon Technologies AG
Integrated Device Technology Inc
International Rectifier
Not Found

Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRL520NPBF by Infineon Technologies AG

Results Overview of IRL520NPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRL520NPBF Information

IRL520NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRL520NPBF

Part # Distributor Description Stock Price Buy
DISTI # 97K2386
Newark Mosfet, N-Ch, 100V, 10A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continu... ous Drain Current Id:10A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRL520NPBF more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 70017091
RS MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.18Ohm, ID 10A, TO-220AB, PD 48W, VGS +/-16V | Infineon IRL... 520NPBF more RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 10
  • 1 $0.4810
  • 5 $0.4430
  • 10 $0.4090
  • 100 $0.3750
$0.3750 / $0.4810 Buy Now
Rochester Electronics IRL520N - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 11
  • 1 $0.4151
  • 25 $0.4068
  • 100 $0.3902
  • 500 $0.3736
  • 1,000 $0.3528
$0.3528 / $0.4151 Buy Now
DISTI # IRL520NPBF
TME Transistor: N-MOSFET, unipolar, 100V, 10A, 48W, TO220AB Min Qty: 1 241
  • 1 $0.8240
  • 10 $0.7090
  • 50 $0.6030
  • 100 $0.5590
  • 250 $0.5040
  • 500 $0.4640
  • 1,000 $0.4250
  • 2,000 $0.3880
  • 5,000 $0.3670
$0.3670 / $0.8240 Buy Now
DISTI # SP001558080
EBV Elektronik Trans MOSFET NCH 100V 10A 3Pin3Tab TO220AB (Alt: SP001558080) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for IRL520NPBF

IRL520NPBF CAD Models

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IRL520NPBF Part Data Attributes

Parametric Data
IRL520NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRL520NPBF Infineon Technologies AG Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 35 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL520NPBF

This table gives cross-reference parts and alternative options found for IRL520NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL520NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRL520N International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRL520NPBF vs IRL520N
Part Number Manufacturer Composite Price Description Compare
IRL520N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRL520NPBF vs IRL520N
IRL520NPBF International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRL520NPBF vs IRL520NPBF
IRL520NLPBF International Rectifier Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN IRL520NPBF vs IRL520NLPBF

IRL520NPBF Related Parts

IRL520NPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRL520NPBF is -55°C to 175°C.

  • Proper cooling can be achieved by using a heat sink, ensuring good thermal contact between the device and the heat sink, and providing adequate airflow.

  • The recommended gate drive voltage for the IRL520NPBF is between 10V and 15V.

  • Yes, the IRL520NPBF is suitable for high-frequency applications up to 1 MHz, but the user should ensure that the device is properly driven and the layout is optimized for high-frequency operation.

  • To protect the IRL520NPBF from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.