Transistors
IRHM8160
Description: Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3

Overview of IRHM8160 by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Environmental Monitoring Industrial Automation Automotive

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Part Data Attributes for IRHM8160 by International Rectifier

IRHM8160
International Rectifier
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-254AA
Package Description
FLANGE MOUNT, R-CSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Avalanche Energy Rating (Eas)
500 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
35 A
Drain-source On Resistance-Max
0.045 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
JESD-30 Code
R-CSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
250 W
Power Dissipation-Max (Abs)
250 W
Pulsed Drain Current-Max (IDM)
201 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
Want to compare parts?
  1. IRHM8160
    International Rectifier
    Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3
    VS

Alternate Parts for IRHM8160

This table gives cross-reference parts and alternative options found for IRHM8160. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM8160, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANSR2N7432 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRHM8160 vs JANSR2N7432
JANSH2N7432 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG IRHM8160 vs JANSH2N7432
IRHM7160 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Infineon Technologies AG IRHM8160 vs IRHM7160
IRHM8160 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Infineon Technologies AG IRHM8160 vs IRHM8160
JANSR2N7432 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG IRHM8160 vs JANSR2N7432
Part Number Description Manufacturer Compare
IRHM8160PBF Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 International Rectifier IRHM8160 vs IRHM8160PBF
JANSH2N7432 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG IRHM8160 vs JANSH2N7432
IRHM7160 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Infineon Technologies AG IRHM8160 vs IRHM7160
JANSR2N7432 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRHM8160 vs JANSR2N7432
JANSR2N7432 Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG IRHM8160 vs JANSR2N7432

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