Part Details for IRHM7160 by Infineon Technologies AG
Overview of IRHM7160 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRHM7160
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRHM7160
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Avnet Americas | Transistor MOSFET N-Channel 100V 35A 3-Pin TO-254AA - Bulk (Alt: IRHM7160) Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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RFQ |
Part Details for IRHM7160
IRHM7160 CAD Models
IRHM7160 Part Data Attributes
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IRHM7160
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRHM7160
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-CSFM-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | RADIATION HARDENED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | R-CSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 201 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IRHM7160
This table gives cross-reference parts and alternative options found for IRHM7160. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM7160, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANSH2N7432 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRHM7160 vs JANSH2N7432 |
| IRHM8160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Infineon Technologies AG | IRHM7160 vs IRHM8160 |
| JANSR2N7432 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRHM7160 vs JANSR2N7432 |
| IRHM8160PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | IRHM7160 vs IRHM8160PBF |
| JANSH2N7432 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHM7160 vs JANSH2N7432 |
| IRHM7160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | IRHM7160 vs IRHM7160 |
| IRHM7160PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | IRHM7160 vs IRHM7160PBF |