Datasheets
IRGPC30UD2 by:

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN

Part Details for IRGPC30UD2 by International Rectifier

Overview of IRGPC30UD2 by International Rectifier

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Part Details for IRGPC30UD2

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IRGPC30UD2 Part Data Attributes

IRGPC30UD2 International Rectifier
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IRGPC30UD2 International Rectifier Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature ULTRA FAST
Case Connection COLLECTOR
Collector Current-Max (IC) 23 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 270 ns
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 380 ns
Turn-on Time-Nom (ton) 111 ns
VCEsat-Max 3 V

Alternate Parts for IRGPC30UD2

This table gives cross-reference parts and alternative options found for IRGPC30UD2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGPC30UD2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRGPC30UD2 vs SGP13N60UF
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IRGPC30UD2 vs HGT1S12N60B3S9A
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IRGPC30UD2 vs SGP5N60RUFD
IXGH38N60 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRGPC30UD2 vs IXGH38N60
HGTP1N120CN Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRGPC30UD2 vs HGTP1N120CN
IXGH50N60B4 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN IXYS Corporation IRGPC30UD2 vs IXGH50N60B4
IRG4BC20FD-SPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRGPC30UD2 vs IRG4BC20FD-SPBF
HGT1S3N60C3DS Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Harris Semiconductor IRGPC30UD2 vs HGT1S3N60C3DS
IRG4PC30UD Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRGPC30UD2 vs IRG4PC30UD
HGTG30N60B3 IGBT, 600V, PT, 450-TUBE onsemi IRGPC30UD2 vs HGTG30N60B3

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