Part Details for IRGP50B60PD1PBF by Infineon Technologies AG
Overview of IRGP50B60PD1PBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRGP50B60PD1PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
63J7462
|
Newark | Single Igbt, 600V, 75A, Continuous Collector Current:75A, Collector Emitter Saturation Voltage:2.85V, Power Dissipation:390W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRGP50B60PD1PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
|
Chip1Cloud | IGBT 600V 75A 390W TO247AC | 7100 |
|
RFQ | |
|
DISTI #
8659672
|
element14 Asia-Pacific | IGBT, 600V, 75A, TO-247AC RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$4.1004 / $7.1425 | Buy Now |
|
DISTI #
8659672
|
Farnell | IGBT, 600V, 75A, TO-247AC RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Each | 0 |
|
$4.3553 / $7.9324 | Buy Now |
Part Details for IRGP50B60PD1PBF
IRGP50B60PD1PBF CAD Models
IRGP50B60PD1PBF Part Data Attributes:
|
|
IRGP50B60PD1PBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRGP50B60PD1PBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY, LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 20 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 390 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 20 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 161 ns | |
| Turn-on Time-Nom (ton) | 39 ns |
Alternate Parts for IRGP50B60PD1PBF
This table gives cross-reference parts and alternative options found for IRGP50B60PD1PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGP50B60PD1PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGP50B60PD1-EP | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | International Rectifier | IRGP50B60PD1PBF vs IRGP50B60PD1-EP |
| IRGP50B60PD1-EPBF | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | International Rectifier | IRGP50B60PD1PBF vs IRGP50B60PD1-EPBF |
| IRGP50B60PD1-E | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | International Rectifier | IRGP50B60PD1PBF vs IRGP50B60PD1-E |
| IRGP50B60PD1 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | International Rectifier | IRGP50B60PD1PBF vs IRGP50B60PD1 |
| IRGP50B60PD1PBF | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | IRGP50B60PD1PBF vs IRGP50B60PD1PBF |
| AUIRGP50B60PD1E | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | IRGP50B60PD1PBF vs AUIRGP50B60PD1E |
| IRGP50B60PD1-EP | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRGP50B60PD1PBF vs IRGP50B60PD1-EP |