There are no models available for this part yet.
Overview of IRGDDN400M06 by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRGDDN400M06 by International Rectifier
Part Data Attributes for IRGDDN400M06 by International Rectifier
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
|
Package Description
|
POST/STUD MOUNT, R-MUPM-X4
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Additional Feature
|
LOW CONDUCTION LOSS
|
|
Case Connection
|
ISOLATED
|
|
Collector Current-Max (IC)
|
600 A
|
|
Collector-Emitter Voltage-Max
|
600 V
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
Gate-Emitter Thr Voltage-Max
|
5.5 V
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JESD-30 Code
|
R-MUPM-X4
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
4
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
METAL
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
POST/STUD MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
1984 W
|
|
Power Dissipation-Max (Abs)
|
1980 W
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
UNSPECIFIED
|
|
Terminal Position
|
UPPER
|
|
Transistor Application
|
MOTOR CONTROL
|
|
Transistor Element Material
|
SILICON
|
|
VCEsat-Max
|
2 V
|
Alternate Parts for IRGDDN400M06
This table gives cross-reference parts and alternative options found for IRGDDN400M06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGDDN400M06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGRDN600M06 | Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel | International Rectifier | IRGDDN400M06 vs IRGRDN600M06 |
| IRGRDN400M06 | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel | International Rectifier | IRGDDN400M06 vs IRGRDN400M06 |
| MBN400AS6 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE | Hitachi Ltd | IRGDDN400M06 vs MBN400AS6 |
| IRGDDN600K06 | Insulated Gate Bipolar Transistor, 680A I(C), 600V V(BR)CES, N-Channel | International Rectifier | IRGDDN400M06 vs IRGDDN600K06 |
| IRGDDN600M06 | Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel | International Rectifier | IRGDDN400M06 vs IRGDDN600M06 |
| IRGRDN400K06 | Insulated Gate Bipolar Transistor, 520A I(C), 600V V(BR)CES, N-Channel | International Rectifier | IRGDDN400M06 vs IRGRDN400K06 |
| IRGDDN300K06 | Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel | International Rectifier | IRGDDN400M06 vs IRGDDN300K06 |
| IRGDDN300M06 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel | International Rectifier | IRGDDN400M06 vs IRGDDN300M06 |
| IRGRDN300K06 | Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel | International Rectifier | IRGDDN400M06 vs IRGRDN300K06 |