IRGRDN300K06
International Rectifier
Description: Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel

Overview of IRGRDN300K06 by International Rectifier

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 8 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for IRGRDN300K06 by International Rectifier
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Part Data Attributes for IRGRDN300K06 by International Rectifier

IRGRDN300K06
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
POST/STUD MOUNT, R-MUPM-X4
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOW CONDUCTION LOSS
Case Connection
ISOLATED
Collector Current-Max (IC)
340 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max
5.5 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-MUPM-X4
Number of Elements
1
Number of Terminals
4
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
RECTANGULAR
Package Style
POST/STUD MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
1563 W
Power Dissipation-Max (Abs)
1560 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
VCEsat-Max
2.7 V
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    International Rectifier
    Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel
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Alternate Parts for IRGRDN300K06

This table gives cross-reference parts and alternative options found for IRGRDN300K06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGRDN300K06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRGDDN300K06 Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN300K06 vs IRGDDN300K06
MBN400AS6 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE Hitachi Ltd IRGRDN300K06 vs MBN400AS6
IRGRDN400M06 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN300K06 vs IRGRDN400M06
IRGDDN600K06 Insulated Gate Bipolar Transistor, 680A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN300K06 vs IRGDDN600K06
IRGDDN400M06 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN300K06 vs IRGDDN400M06
IRGRDN300M06 Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN300K06 vs IRGRDN300M06
MBN400AS6 400A, 600V, N-CHANNEL IGBT, MODULE Renesas Electronics Corporation IRGRDN300K06 vs MBN400AS6
IRGRDN600K06 Insulated Gate Bipolar Transistor, 680A I(C), 600V V(BR)CES, N-Channel International Rectifier IRGRDN300K06 vs IRGRDN600K06

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