Part Details for IRGB4B60KD1PBF by International Rectifier
Overview of IRGB4B60KD1PBF by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRGB4B60KD1PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 200 |
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RFQ | ||
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Quest Components | 160 |
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$1.2686 / $2.5372 | Buy Now | |
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Rochester Electronics | IRGB4B60K - IGBT with Ultrafast Soft Recovery Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 57450 |
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$0.7929 / $0.9328 | Buy Now |
Part Details for IRGB4B60KD1PBF
IRGB4B60KD1PBF CAD Models
IRGB4B60KD1PBF Part Data Attributes
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IRGB4B60KD1PBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRGB4B60KD1PBF
International Rectifier
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | LEAD FREE PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA FAST SOFT RECOVERY | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 11 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 89 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 63 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 23 ns | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 199 ns | |
Turn-on Time-Nom (ton) | 40 ns |
Alternate Parts for IRGB4B60KD1PBF
This table gives cross-reference parts and alternative options found for IRGB4B60KD1PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGB4B60KD1PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRGB4B60KD1 | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IRGB4B60KD1PBF vs IRGB4B60KD1 |
IRGB4B60KD1PBF | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRGB4B60KD1PBF vs IRGB4B60KD1PBF |