Part Details for IRGB4B60KD1PBF by Infineon Technologies AG
Overview of IRGB4B60KD1PBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRGB4B60KD1PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRGB4B60KD1PBF
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Avnet Americas | Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB4B60KD1PBF) RoHS: Compliant Min Qty: 391 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 57450 Partner Stock |
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$0.8123 / $0.9146 | Buy Now |
Part Details for IRGB4B60KD1PBF
IRGB4B60KD1PBF CAD Models
IRGB4B60KD1PBF Part Data Attributes
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IRGB4B60KD1PBF
Infineon Technologies AG
Buy Now
Datasheet
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IRGB4B60KD1PBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA FAST SOFT RECOVERY | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 11 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 89 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 63 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 23 ns | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 199 ns | |
Turn-on Time-Nom (ton) | 40 ns |
Alternate Parts for IRGB4B60KD1PBF
This table gives cross-reference parts and alternative options found for IRGB4B60KD1PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGB4B60KD1PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRGB4B60KD1 | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IRGB4B60KD1PBF vs IRGB4B60KD1 |