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IRG7PH50K10DPBF by:

Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel

Part Details for IRG7PH50K10DPBF by International Rectifier

Overview of IRG7PH50K10DPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRG7PH50K10DPBF

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRG7PH50K10DPBF-ND
DigiKey IGBT 1200V 90A TO247AC Min Qty: 47 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 4827
In Stock
  • 47 $6.4700
$6.4700 Buy Now
Rochester Electronics IRG7PH50K10 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 4827
  • 1 $6.5300
  • 25 $6.4000
  • 100 $6.1400
  • 500 $5.8800
  • 1,000 $5.5500
$5.5500 / $6.5300 Buy Now
ComSIT USA INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant Europe - 375
RFQ

Part Details for IRG7PH50K10DPBF

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IRG7PH50K10DPBF Part Data Attributes:

IRG7PH50K10DPBF International Rectifier
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IRG7PH50K10DPBF International Rectifier Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 90 A
Collector-Emitter Voltage-Max 1200 V
Fall Time-Max (tf) 110 ns
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 30 V
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Rise Time-Max (tr) 80 ns
Surface Mount NO

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