Manufacturer | Description | Price Range | Set Alert | Details |
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Vishay Intertechnologies | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 |
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International Rectifier | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | $0.8400 / $5.2773 |
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Harris Semiconductor | Power Field-Effect Transistor, 0.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | $1.6450 / $2.6320 |
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TT Electronics Resistors |
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Vishay Huntington | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs | MOSFET P-CH 200V 3.6A DPAK | $0.4860 / $0.7280 |
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Samsung Semiconductor | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 |
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Intersil Corporation | 3.6A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Vishay Siliconix | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 |
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Thomson Consumer Electronics | Transistor |
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Rochester Electronics LLC | 0.6A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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