Part Details for IRG4PSH71KPBF by International Rectifier
Overview of IRG4PSH71KPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRG4PSH71KPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 29 |
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Quest Components | 9 |
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$8.2800 / $11.0400 | Buy Now | |
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Quest Components | 544 |
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$15.0000 / $22.5000 | Buy Now | |
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ComSIT USA | SHORT CIRCUIT RATED ULTRAFAST INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, TO-274AA RoHS: Compliant | Europe - 20 |
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RFQ |
Part Details for IRG4PSH71KPBF
IRG4PSH71KPBF CAD Models
IRG4PSH71KPBF Part Data Attributes
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IRG4PSH71KPBF
International Rectifier
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Datasheet
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IRG4PSH71KPBF
International Rectifier
Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-274AA | |
| Package Description | LEAD FREE, SUPER-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 78 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 250 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-274AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 350 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 710 ns | |
| Turn-on Time-Nom (ton) | 83 ns |
Alternate Parts for IRG4PSH71KPBF
This table gives cross-reference parts and alternative options found for IRG4PSH71KPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PSH71KPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | IRG4PSH71KPBF vs HGT1S3N60B3S |
| HGTP7N60B3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IRG4PSH71KPBF vs HGTP7N60B3 |
| GT10J312 | TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IRG4PSH71KPBF vs GT10J312 |
| IXSH35N100A | Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IRG4PSH71KPBF vs IXSH35N100A |
| IKA06N60TXKSA1 | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IRG4PSH71KPBF vs IKA06N60TXKSA1 |
| IRG4PC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IRG4PSH71KPBF vs IRG4PC50U |
| IRG4PC30KD | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IRG4PSH71KPBF vs IRG4PC30KD |
| IXGH28N60BD1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IRG4PSH71KPBF vs IXGH28N60BD1 |
| HGTP7N60A4D | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Fairchild Semiconductor Corporation | IRG4PSH71KPBF vs HGTP7N60A4D |
| SGH40N60UFD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Samsung Semiconductor | IRG4PSH71KPBF vs SGH40N60UFD |