Part Details for IRG4PH40KD by Infineon Technologies AG
Results Overview of IRG4PH40KD by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
IRG4PH40KD Information
IRG4PH40KD by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRG4PH40KD
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 7 |
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RFQ |
Part Details for IRG4PH40KD
IRG4PH40KD CAD Models
IRG4PH40KD Part Data Attributes
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IRG4PH40KD
Infineon Technologies AG
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Datasheet
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IRG4PH40KD
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-3P, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 30 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 330 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 160 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 730 ns | |
| Turn-on Time-Nom (ton) | 82 ns | |
| VCEsat-Max | 3.4 V |
Alternate Parts for IRG4PH40KD
This table gives cross-reference parts and alternative options found for IRG4PH40KD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PH40KD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRG4PH40KDPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | IRG4PH40KD vs IRG4PH40KDPBF |
| IRG4PH40KDPBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | IRG4PH40KD vs IRG4PH40KDPBF |