Datasheets
IRG4IBC30SPBF by:

Insulated Gate Bipolar Transistor, 23.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3

Part Details for IRG4IBC30SPBF by International Rectifier

Overview of IRG4IBC30SPBF by International Rectifier

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Applications Industrial Automation Energy and Power Systems Electronic Manufacturing

Price & Stock for IRG4IBC30SPBF

Part # Distributor Description Stock Price Buy
Quest Components INSULATED GATE BIPOLAR TRANSISTOR, 23.5A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB 47
  • 1 $2.3063
  • 13 $1.8450
  • 42 $1.3838
$1.3838 / $2.3063 Buy Now

Part Details for IRG4IBC30SPBF

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IRG4IBC30SPBF Part Data Attributes

IRG4IBC30SPBF International Rectifier
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IRG4IBC30SPBF International Rectifier Insulated Gate Bipolar Transistor, 23.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 23.5 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 590 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1550 ns
Turn-on Time-Nom (ton) 40 ns

Alternate Parts for IRG4IBC30SPBF

This table gives cross-reference parts and alternative options found for IRG4IBC30SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4IBC30SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4IBC30S Insulated Gate Bipolar Transistor, 23.5A I(C), 600V V(BR)CES, N-Channel, TO-220, FULL PACK-3 Infineon Technologies AG IRG4IBC30SPBF vs IRG4IBC30S
Part Number Description Manufacturer Compare
HGT1S12N60B3DS 27A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation IRG4IBC30SPBF vs HGT1S12N60B3DS
HGTG30N120CN 30A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation IRG4IBC30SPBF vs HGTG30N120CN
HGTG27N120BN Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation IRG4IBC30SPBF vs HGTG27N120BN
IRG4IBC30KDPBF Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PAK-3 International Rectifier IRG4IBC30SPBF vs IRG4IBC30KDPBF
SGP04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens IRG4IBC30SPBF vs SGP04N60
SKW30N60FKSA1 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IRG4IBC30SPBF vs SKW30N60FKSA1
IRG4PH30KPBF Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRG4IBC30SPBF vs IRG4PH30KPBF
IRG4PF50WDPBF Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRG4IBC30SPBF vs IRG4PF50WDPBF
IRG4PSC71KPBF Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, SUPER-247, 3 PIN International Rectifier IRG4IBC30SPBF vs IRG4PSC71KPBF
GT80J101 TRANSISTOR 80 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4IBC30SPBF vs GT80J101

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