Part Details for IRG4BC30W by International Rectifier
Overview of IRG4BC30W by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Electronic Manufacturing
Price & Stock for IRG4BC30W
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | IGBT Transistor, N-CHAN, TO-220AB | 1152 |
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$1.4850 / $3.7125 | Buy Now |
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Quest Components | IGBT Transistor, N-CHAN, TO-220AB | 137 |
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$2.2385 / $3.6300 | Buy Now |
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Quest Components | IGBT Transistor, N-CHAN, TO-220AB | 158 |
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$2.2894 / $3.7125 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 34 |
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$1.0000 / $1.5400 | Buy Now |
Part Details for IRG4BC30W
IRG4BC30W CAD Models
IRG4BC30W Part Data Attributes:
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IRG4BC30W
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRG4BC30W
International Rectifier
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 23 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 100 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 300 ns | |
| Turn-on Time-Nom (ton) | 41 ns |
Alternate Parts for IRG4BC30W
This table gives cross-reference parts and alternative options found for IRG4BC30W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4BC30S | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRG4BC30W vs IRG4BC30S |
| HGTG30N60A4 | 600V, SMPS IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL | Fairchild Semiconductor Corporation | IRG4BC30W vs HGTG30N60A4 |
| IRG4PC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | International Rectifier | IRG4BC30W vs IRG4PC50U |
| HGTG11N120CND | Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247, | Fairchild Semiconductor Corporation | IRG4BC30W vs HGTG11N120CND |
| IRG4PH50K | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AB, TO-247AB, 3 PIN | International Rectifier | IRG4BC30W vs IRG4PH50K |
| IRG4BC15UD-S | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IRG4BC30W vs IRG4BC15UD-S |
| IRG4BC30UD | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRG4BC30W vs IRG4BC30UD |
| IRG4BC20U | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRG4BC30W vs IRG4BC20U |
| IRG4BC40K | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRG4BC30W vs IRG4BC40K |
| HGTG30N60B3 | 600V, PT IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL | Fairchild Semiconductor Corporation | IRG4BC30W vs HGTG30N60B3 |