Datasheets
IRG4BC20UD-S by:

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

Part Details for IRG4BC20UD-S by International Rectifier

Overview of IRG4BC20UD-S by International Rectifier

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Part Details for IRG4BC20UD-S

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IRG4BC20UD-S Part Data Attributes:

IRG4BC20UD-S International Rectifier
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IRG4BC20UD-S International Rectifier Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 13 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 170 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 320 ns
Turn-on Time-Nom (ton) 55 ns

Alternate Parts for IRG4BC20UD-S

This table gives cross-reference parts and alternative options found for IRG4BC20UD-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC20UD-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC20UD-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC20UD-S vs IRG4BC20UD-S
Part Number Description Manufacturer Compare
IRG4PC40W Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4PC40W
IRG4PH20KD Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4PH20KD
IRG4BC30UD Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4BC30UD
IRG4BC20UD Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4BC20UD
IRG4PH50UD Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4PH50UD
HGTP3N60A4 600V, SMPS IGBT, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL Fairchild Semiconductor Corporation IRG4BC20UD-S vs HGTP3N60A4
IRG4PC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4PC40U
IRG4PH50KD Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4PH50KD
IRG4BC20U Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4BC20U
IRG4PC30S Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4BC20UD-S vs IRG4PC30S

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