Datasheets
IRG4BC20UD-S by:

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

Part Details for IRG4BC20UD-S by Infineon Technologies AG

Overview of IRG4BC20UD-S by Infineon Technologies AG

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Part Details for IRG4BC20UD-S

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IRG4BC20UD-S Part Data Attributes

IRG4BC20UD-S Infineon Technologies AG
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IRG4BC20UD-S Infineon Technologies AG Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description PLASTIC, D2PAK-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 13 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 320 ns
Turn-on Time-Nom (ton) 55 ns

Alternate Parts for IRG4BC20UD-S

This table gives cross-reference parts and alternative options found for IRG4BC20UD-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC20UD-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC20UD-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC20UD-S vs IRG4BC20UD-S
IRG4BC20UD-SPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC20UD-S vs IRG4BC20UD-SPBF
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRG4BC20UD-S vs SGP13N60UF
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC20UD-S vs IRGBC40U
STGW12NB60HD 24A, 600V, N-CHANNEL IGBT, TO-247, TO-247, 3 PIN STMicroelectronics IRG4BC20UD-S vs STGW12NB60HD
IRG4BC40W Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRG4BC20UD-S vs IRG4BC40W
HGTG11N120CND_NL Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IRG4BC20UD-S vs HGTG11N120CND_NL
SGP07N120 Insulated Gate Bipolar Transistor, 16.5A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRG4BC20UD-S vs SGP07N120
APT30GT60BRD Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Advanced Power Technology IRG4BC20UD-S vs APT30GT60BRD
IXGH17N100 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC20UD-S vs IXGH17N100
IRG4IBC10UDPBF Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 Infineon Technologies AG IRG4BC20UD-S vs IRG4IBC10UDPBF
IRG4BC15MDPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRG4BC20UD-S vs IRG4BC15MDPBF

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