Datasheets
IRFY240 by:

12A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for IRFY240 by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRFY240 by TT Electronics Power and Hybrid / Semelab Limited

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRFY240

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IRFY240 Part Data Attributes:

IRFY240 TT Electronics Power and Hybrid / Semelab Limited
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IRFY240 TT Electronics Power and Hybrid / Semelab Limited 12A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFY240

This table gives cross-reference parts and alternative options found for IRFY240. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY240, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFY240R1 12A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY240 vs IRFY240R1
IRFY240 Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257, TO-257, 3 PIN Microsemi Corporation IRFY240 vs IRFY240
IRFY240 Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY240 vs IRFY240
IRFY240CR1 Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors IRFY240 vs IRFY240CR1
IRFY240-JQR-B 12A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY240 vs IRFY240-JQR-B
IRFY240CR1 16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Power and Hybrid / Semelab Limited IRFY240 vs IRFY240CR1
IRFY240C 16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Power and Hybrid / Semelab Limited IRFY240 vs IRFY240C
IRFY240 Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN Infineon Technologies AG IRFY240 vs IRFY240
IRFY240C Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG IRFY240 vs IRFY240C
IRFY240-JQR-B Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY240 vs IRFY240-JQR-B
Part Number Description Manufacturer Compare
IRFY240MEC Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY240 vs IRFY240MEC
IRFY240EC Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY240 vs IRFY240EC
IRFY240-JQR-B 12A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY240 vs IRFY240-JQR-B
IRFY240EBPBF Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY240 vs IRFY240EBPBF
IRFY240EDPBF Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY240 vs IRFY240EDPBF
IRFY240M Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Resistors IRFY240 vs IRFY240M
IRFY240EAPBF 12A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY240 vs IRFY240EAPBF
IRFY240SCVPBF Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY240 vs IRFY240SCVPBF
IRFY240EC Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY240 vs IRFY240EC
IRFY240CSCSPBF Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY240 vs IRFY240CSCSPBF

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