Part Details for IRFY240MEC by Infineon Technologies AG
Overview of IRFY240MEC by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRFY240MEC
IRFY240MEC CAD Models
IRFY240MEC Part Data Attributes
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IRFY240MEC
Infineon Technologies AG
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Datasheet
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IRFY240MEC
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AB | |
| JESD-30 Code | S-MSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | CECC | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFY240MEC
This table gives cross-reference parts and alternative options found for IRFY240MEC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY240MEC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFY240 | Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257, TO-257, 3 PIN | Microsemi Corporation | IRFY240MEC vs IRFY240 |
| IRFY240MEBPBF | 12A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB | Infineon Technologies AG | IRFY240MEC vs IRFY240MEBPBF |
| SHD219403 | Power Field-Effect Transistor, 14A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-28 | Sensitron Semiconductors | IRFY240MEC vs SHD219403 |
| IRFY240ED | Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, | Infineon Technologies AG | IRFY240MEC vs IRFY240ED |
| IRFY240MEBPBF | Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY240MEC vs IRFY240MEBPBF |
| IRFY240 | Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN | International Rectifier | IRFY240MEC vs IRFY240 |
| IRFY240MEB | Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, | Infineon Technologies AG | IRFY240MEC vs IRFY240MEB |
| IRFY240MEPBF | 12A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB | Infineon Technologies AG | IRFY240MEC vs IRFY240MEPBF |
| IRFY240ME | Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, | Infineon Technologies AG | IRFY240MEC vs IRFY240ME |
| IRFY240MEAPBF | Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY240MEC vs IRFY240MEAPBF |