Part Details for IRFS640A by Fairchild Semiconductor Corporation
Overview of IRFS640A by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFS640A
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFS640A-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 606 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2576 In Stock |
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$0.5000 | Buy Now |
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Rochester Electronics | 9.8A, 200V, 0.18ohm, N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2576 |
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$0.4254 / $0.5005 | Buy Now |
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Chip1Cloud | Rugged Gate Oxide Technology | 11100 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 15 |
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Buy Now |
Part Details for IRFS640A
IRFS640A CAD Models
IRFS640A Part Data Attributes:
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IRFS640A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
IRFS640A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220F | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 256 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9.8 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 43 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFS640A
This table gives cross-reference parts and alternative options found for IRFS640A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS640A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFS640A | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Samsung Semiconductor | IRFS640A vs IRFS640A |