Datasheets
IRFS624A by:

Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for IRFS624A by Fairchild Semiconductor Corporation

Overview of IRFS624A by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for IRFS624A

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IRFS624A Part Data Attributes

IRFS624A Fairchild Semiconductor Corporation
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IRFS624A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 72 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 3.4 A
Drain-source On Resistance-Max 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFS624A

This table gives cross-reference parts and alternative options found for IRFS624A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS624A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFS624A Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Samsung Semiconductor IRFS624A vs IRFS624A
Part Number Description Manufacturer Compare
IRFI624GPBF Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier IRFS624A vs IRFI624GPBF
IRFS624 Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRFS624A vs IRFS624
STP6N25FI 4A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ISOWATT220, 3 PIN STMicroelectronics IRFS624A vs STP6N25FI
IRFS624A Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Samsung Semiconductor IRFS624A vs IRFS624A
FQPF6N25 Power Field-Effect Transistor, 4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation IRFS624A vs FQPF6N25
IRFI624G Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFS624A vs IRFI624G
STP6NB25FP 5A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FP, 3 PIN STMicroelectronics IRFS624A vs STP6NB25FP

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