Manufacturer | Description | Price Range | Set Alert | Details |
---|---|---|---|---|
Samsung Semiconductor | Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN |
|
View Details | |
Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
View Details |