Transistors
IRFS5615PBF
Description: Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

Overview of IRFS5615PBF by International Rectifier

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Part Data Attributes for IRFS5615PBF by International Rectifier

IRFS5615PBF
International Rectifier
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
D2PAK
Package Description
LEAD FREE, D2PAK-3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
109 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
Drain Current-Max (ID)
33 A
Drain-source On Resistance-Max
0.042 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
144 W
Pulsed Drain Current-Max (IDM)
140 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. IRFS5615PBF
    International Rectifier
    Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
    VS

Alternate Parts for IRFS5615PBF

This table gives cross-reference parts and alternative options found for IRFS5615PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS5615PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFS5615TRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 International Rectifier IRFS5615PBF vs IRFS5615TRRPBF
IRFS5615TRLPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 International Rectifier IRFS5615PBF vs IRFS5615TRLPBF
Part Number Description Manufacturer Compare
IRFS5615TRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 International Rectifier IRFS5615PBF vs IRFS5615TRRPBF
IRFS5615TRLPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRFS5615PBF vs IRFS5615TRLPBF

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