IRFS5615PBF
vs
IRFS5615TRLPBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INFINEON TECHNOLOGIES AG
Part Package Code
D2PAK
Package Description
LEAD FREE, D2PAK-3
Pin Count
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
109 mJ
109 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
150 V
Drain Current-Max (ID)
33 A
33 A
Drain-source On Resistance-Max
0.042 Ω
0.042 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
144 W
144 W
Pulsed Drain Current-Max (IDM)
140 A
140 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN OVER NICKEL
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Samacsys Manufacturer
Infineon
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRFS5615PBF with alternatives
Compare IRFS5615TRLPBF with alternatives