Datasheets
IRFR9210PBF by:

Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

Part Details for IRFR9210PBF by Vishay Siliconix

Overview of IRFR9210PBF by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFR9210PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFR9210PBF-ND
DigiKey MOSFET P-CH 200V 1.9A DPAK Min Qty: 1 Lead time: 20 Weeks Container: Tube 2915
In Stock
  • 1 $1.3000
  • 75 $1.0431
  • 150 $0.8265
  • 525 $0.7006
  • 1,050 $0.5707
  • 2,025 $0.5373
  • 5,025 $0.5117
  • 10,050 $0.4881
$0.4881 / $1.3000 Buy Now
ComSIT USA POWER MOSFET Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant Europe - 1200
RFQ

Part Details for IRFR9210PBF

IRFR9210PBF CAD Models

IRFR9210PBF Part Data Attributes:

IRFR9210PBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFR9210PBF Vishay Siliconix Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 7.6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR9210PBF

This table gives cross-reference parts and alternative options found for IRFR9210PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9210PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR9210TR Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9210PBF vs IRFR9210TR
IRFR9210 Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR9210PBF vs IRFR9210
IRFR9210TRRPBF Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR9210PBF vs IRFR9210TRRPBF
IRFR9210TRPBF Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR9210PBF vs IRFR9210TRPBF
IRFR9210TRR Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9210PBF vs IRFR9210TRR
IRFR9210TRPBF Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9210PBF vs IRFR9210TRPBF
SIHFR9210TR-GE3 TRANSISTOR 1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9210PBF vs SIHFR9210TR-GE3
SIHFR9210T-E3 TRANSISTOR 1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9210PBF vs SIHFR9210T-E3
IRFR9210PBF Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR9210PBF vs IRFR9210PBF
IRFR9210PBF Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR9210PBF vs IRFR9210PBF
Part Number Description Manufacturer Compare
IRFR9210 Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR9210PBF vs IRFR9210
IRFR9210PBF Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR9210PBF vs IRFR9210PBF
IRFR9210 Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR9210PBF vs IRFR9210
IRFR9210TRR Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9210PBF vs IRFR9210TRR
IRFR9210TRLPBF Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR9210PBF vs IRFR9210TRLPBF
IRFR9210TR Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9210PBF vs IRFR9210TR
IRFR9210 Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9210PBF vs IRFR9210
IRFR9210TRPBF Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR9210PBF vs IRFR9210TRPBF
SIHFR9210T-E3 TRANSISTOR 1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9210PBF vs SIHFR9210T-E3
SIHFR9210TR-GE3 TRANSISTOR 1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9210PBF vs SIHFR9210TR-GE3

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