| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Harris Semiconductor | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | $0.5000 / $1.2000 |
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| International Rectifier | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | $0.3797 / $4.9725 |
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| Vishay Siliconix | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2.4A I(D),TO-252AA | $0.5600 / $1.2000 |
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| Intersil Corporation | 2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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| Vishay Huntington | 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs | MOSFET N-CH 500V 2.4A DPAK | $0.3480 / $0.4500 |
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| Rochester Electronics LLC | 2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Samsung Semiconductor | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 |
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