Part Details for IRFR3707ZTRPBF by Infineon Technologies AG
Overview of IRFR3707ZTRPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR3707ZTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9133
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Newark | Mosfet, N-Ch, 30V, 56A, To-252Aa, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:56A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Infineon IRFR3707ZTRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3456 |
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$0.4550 / $0.9920 | Buy Now |
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DISTI #
IRFR3707ZTRPBFCT-ND
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DigiKey | MOSFET N-CH 30V 56A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
42293 In Stock |
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$0.3002 / $0.9000 | Buy Now |
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DISTI #
IRFR3707ZTRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 56A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3707ZTRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 2000 |
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$0.2674 / $0.3269 | Buy Now |
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DISTI #
13AC9133
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Avnet Americas | Trans MOSFET N-CH 30V 56A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 13AC9133) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 1041 Partner Stock |
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$0.6060 / $0.9720 | Buy Now |
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DISTI #
942-IRFR3707ZTRPBF
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Mouser Electronics | MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC RoHS: Compliant | 1887 |
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$0.2990 / $0.8800 | Buy Now |
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DISTI #
70019013
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RS | IRFR3707ZTRPBF N-channel MOSFET Transistor, 56 A, 30 V, 3-Pin TO-252AA | Infineon IRFR3707ZTRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.7800 / $0.9700 | RFQ |
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Future Electronics | Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.2700 / $0.2900 | Buy Now |
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Future Electronics | Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.2700 / $0.2900 | Buy Now |
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DISTI #
SP001564908
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EBV Elektronik | Trans MOSFET N-CH 30V 56A 3-Pin(2+Tab) DPAK T/R (Alt: SP001564908) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRFR3707ZTRPBF
IRFR3707ZTRPBF CAD Models
IRFR3707ZTRPBF Part Data Attributes:
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IRFR3707ZTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR3707ZTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 42 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 120 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR3707ZTRPBF
This table gives cross-reference parts and alternative options found for IRFR3707ZTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3707ZTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR3707ZTRL | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR3707ZTRPBF vs IRFR3707ZTRL |
| IRFR3707ZCTRRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR3707ZTRPBF vs IRFR3707ZCTRRPBF |
| IRFR3707ZCTRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR3707ZTRPBF vs IRFR3707ZCTRPBF |
| IRFR3707ZTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3707ZTRPBF vs IRFR3707ZTRLPBF |
| IRFR3707ZTRRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3707ZTRPBF vs IRFR3707ZTRRPBF |
| IRFR3707ZPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3707ZTRPBF vs IRFR3707ZPBF |
| IRFR3707ZCPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR3707ZTRPBF vs IRFR3707ZCPBF |
| IRFR3707ZCTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR3707ZTRPBF vs IRFR3707ZCTRLPBF |
| IRFR3707ZCTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRFR3707ZTRPBF vs IRFR3707ZCTRLPBF |
| IRFR3707ZCTRRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRFR3707ZTRPBF vs IRFR3707ZCTRRPBF |