IRFP360
Description: Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Overview of IRFP360 by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFP360 by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1185
RFQ
Bristol Electronics   1
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-247AC 839
  • 1 $3.5600
  • 365 $1.4685
  • 682 $1.3350
$1.3350 / $3.5600 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247AC 222
  • 1 $3.9600
  • 10 $1.9800
  • 102 $1.7160
$1.7160 / $3.9600 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247AC 1
  • 1 $11.7000
$11.7000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 35
  • 1 $5.0000
  • 100 $3.7500
  • 1,000 $3.2500
$3.2500 / $5.0000 Buy Now

CAD Models for IRFP360 by International Rectifier
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Part Data Attributes for IRFP360 by International Rectifier

IRFP360
International Rectifier
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
1200 mJ
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
23 A
Drain-source On Resistance-Max
0.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AC
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
280 W
Power Dissipation-Max (Abs)
280 W
Pulsed Drain Current-Max (IDM)
92 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFP360
    International Rectifier
    Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    VS

Alternate Parts for IRFP360

This table gives cross-reference parts and alternative options found for IRFP360. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP360, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFP360 vs IRFP360PBF
IRFP360 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP360 vs IRFP360
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFP360 vs IRFP360PBF
IRFP360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRFP360 vs IRFP360
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRFP360 vs IRFP360PBF
IRFP360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN Vishay Intertechnologies IRFP360 vs IRFP360
Part Number Description Manufacturer Compare
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFP360 vs IRFP360PBF
IRFP360 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP360 vs IRFP360
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFP360 vs IRFP360PBF
IRFM360-JQR-B Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFP360 vs IRFM360-JQR-B
IRFM360 Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG IRFP360 vs IRFM360
IRFP360PBF Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRFP360 vs IRFP360PBF
IRFP360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP360 vs IRFP360
IRFM360R1 23A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFP360 vs IRFM360R1
IRFP360 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRFP360 vs IRFP360
IRFM360-JQR-BR1 Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFP360 vs IRFM360-JQR-BR1

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