Datasheets
IRFIZ24N by:

Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3

Part Details for IRFIZ24N by International Rectifier

Overview of IRFIZ24N by International Rectifier

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Price & Stock for IRFIZ24N

Part # Distributor Description Stock Price Buy
Bristol Electronics   59
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB(FP) 1000
  • 1 $0.9000
  • 94 $0.4200
  • 477 $0.3750
$0.3750 / $0.9000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB(FP) 53
  • 1 $1.5000
  • 4 $1.2000
  • 18 $0.9000
$0.9000 / $1.5000 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Europe - 8000
RFQ

Part Details for IRFIZ24N

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IRFIZ24N Part Data Attributes:

IRFIZ24N International Rectifier
Buy Now Datasheet
Compare Parts:
IRFIZ24N International Rectifier Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description TO-220, FULLPAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 71 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 29 W
Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFIZ24N

This table gives cross-reference parts and alternative options found for IRFIZ24N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFIZ24N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFIZ24NPBF Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 Infineon Technologies AG IRFIZ24N vs IRFIZ24NPBF
IRFIZ24NPBF Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 International Rectifier IRFIZ24N vs IRFIZ24NPBF
IRFIZ24N Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 Infineon Technologies AG IRFIZ24N vs IRFIZ24N
Part Number Description Manufacturer Compare
IRFIZ24NPBF Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 Infineon Technologies AG IRFIZ24N vs IRFIZ24NPBF
IRFIZ24NPBF Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 International Rectifier IRFIZ24N vs IRFIZ24NPBF
IRFIZ24N Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 Infineon Technologies AG IRFIZ24N vs IRFIZ24N

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