Part Details for IRFI650B by Fairchild Semiconductor Corporation
Overview of IRFI650B by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFI650B
IRFI650B CAD Models
IRFI650B Part Data Attributes:
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IRFI650B
Fairchild Semiconductor Corporation
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Datasheet
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IRFI650B
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 600 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 112 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFI650B
This table gives cross-reference parts and alternative options found for IRFI650B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFI650B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SFF250ZUBTXV | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | IRFI650B vs SFF250ZUBTXV |
SSPL2090 | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | IRFI650B vs SSPL2090 |
SFF250ZS | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | IRFI650B vs SFF250ZS |
IRF650AJ69Z | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRFI650B vs IRF650AJ69Z |
FQP34N20 | Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220, 1000-TUBE | onsemi | IRFI650B vs FQP34N20 |
SFF250ZDBTXV | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | IRFI650B vs SFF250ZDBTXV |
SFF250ZUBS | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | IRFI650B vs SFF250ZUBS |
FQP34N20J69Z | Power Field-Effect Transistor, 31A I(D), 200V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRFI650B vs FQP34N20J69Z |
MTV32N20E-RL | Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Motorola Semiconductor Products | IRFI650B vs MTV32N20E-RL |
SFF250Z | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | IRFI650B vs SFF250Z |