IRFI650B
vs
MTV32N20E-RL
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
MOTOROLA INC
|
| Package Description |
IN-LINE, R-PSIP-T3
|
SMALL OUTLINE, R-PSSO-G2
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
600 mJ
|
810 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
28 A
|
32 A
|
| Drain-source On Resistance-Max |
0.085 Ω
|
0.075 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
156 W
|
|
| Pulsed Drain Current-Max (IDM) |
112 A
|
128 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
1
|
| HTS Code |
|
8541.29.00.95
|
| Additional Feature |
|
AVALANCHE RATED
|
| Case Connection |
|
DRAIN
|
| Feedback Cap-Max (Crss) |
|
1000 pF
|
| Power Dissipation Ambient-Max |
|
180 W
|
| Turn-off Time-Max (toff) |
|
332 ns
|
| Turn-on Time-Max (ton) |
|
290 ns
|
|
|
|
Compare IRFI650B with alternatives
Compare MTV32N20E-RL with alternatives