Part Details for IRFF111 by Harris Semiconductor
Overview of IRFF111 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFF111
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFF111-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 101 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
176 In Stock |
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$3.0000 | Buy Now |
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Rochester Electronics | 3.5A, 80V, 0.6 OHM, N-Channel MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 176 |
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$2.5700 / $3.0300 | Buy Now |
Part Details for IRFF111
IRFF111 CAD Models
IRFF111 Part Data Attributes:
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IRFF111
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFF111
Harris Semiconductor
Power Field-Effect Transistor, 3.5A I(D), 80V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 15 W | |
| Power Dissipation-Max (Abs) | 15 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 45 ns | |
| Turn-on Time-Max (ton) | 45 ns |
Alternate Parts for IRFF111
This table gives cross-reference parts and alternative options found for IRFF111. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF111, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFF110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | IRFF111 vs IRFF110 |
| 2N6796 | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN | Infineon Technologies AG | IRFF111 vs 2N6796 |
| 2N6788 | 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 | Motorola Mobility LLC | IRFF111 vs 2N6788 |
| 2N6788.MODR1 | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | IRFF111 vs 2N6788.MODR1 |
| JANTXV2N6796 | Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Semicoa Semiconductors | IRFF111 vs JANTXV2N6796 |
| 2N6796TXV | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | IRFF111 vs 2N6796TXV |
| JANTX2N6782 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | IRFF111 vs JANTX2N6782 |
| IRFF130 | Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF111 vs IRFF130 |
| IRFF123 | 5A, 60V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 | Motorola Mobility LLC | IRFF111 vs IRFF123 |
| IRFF131 | 8A, 80V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF111 vs IRFF131 |