Datasheets
IRFBC30L by: International Rectifier

Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

Part Details for IRFBC30L by International Rectifier

Overview of IRFBC30L by International Rectifier

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Part Details for IRFBC30L

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IRFBC30L Part Data Attributes:

IRFBC30L International Rectifier
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IRFBC30L International Rectifier Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 3.6 A
Drain-source On Resistance-Max 2.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFBC30L

This table gives cross-reference parts and alternative options found for IRFBC30L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC30L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC30LPBF Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRFBC30L vs IRFBC30LPBF
Part Number Description Manufacturer Compare
STB11NM60Z-1 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 STMicroelectronics IRFBC30L vs STB11NM60Z-1
IRFSL9N60APBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN International Rectifier IRFBC30L vs IRFSL9N60APBF
2SK3116-S Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, FIN CUT, MP-25, 3 PIN NEC Electronics Group IRFBC30L vs 2SK3116-S
IRFSL11N50APBF Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay Siliconix IRFBC30L vs IRFSL11N50APBF
2SK3688-01L Power Field-Effect Transistor, 16A I(D), 600V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPACK-3 Fuji Electric Co Ltd IRFBC30L vs 2SK3688-01L
SPI07N60C3 7.3A, 600V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Rochester Electronics LLC IRFBC30L vs SPI07N60C3
FQI7N60 Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRFBC30L vs FQI7N60
IRFBC40LPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRFBC30L vs IRFBC40LPBF
IRFBC20L Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRFBC30L vs IRFBC20L
STI13NM60N N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package STMicroelectronics IRFBC30L vs STI13NM60N

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