Part Details for IRF9610 by Samsung Semiconductor
Overview of IRF9610 by Samsung Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF9610
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Onlinecomponents.com |
25 In Stock |
|
$0.5600 / $2.5100 | Buy Now | |
|
|
Bristol Electronics | Min Qty: 2 | 50 |
|
$1.8564 / $3.7128 | Buy Now |
|
|
Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 40 |
|
$2.4863 / $4.9725 | Buy Now |
Part Details for IRF9610
IRF9610 CAD Models
IRF9610 Part Data Attributes:
|
|
IRF9610
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
IRF9610
Samsung Semiconductor
Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SFM | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 1.75 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 7 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 30 ns | |
| Turn-on Time-Max (ton) | 40 ns |
Alternate Parts for IRF9610
This table gives cross-reference parts and alternative options found for IRF9610. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9610, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9610 | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF9610 vs IRF9610 |
| IRF9610 | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF9610 vs IRF9610 |