Manufacturer | Description | Price Range | Set Alert | Details |
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Vishay Intertechnologies | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | $0.6778 / $2.7237 |
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New Jersey Semiconductor Products, Inc. | $1.3394 / $3.0912 |
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Samsung Semiconductor | Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | $1.8564 / $4.9725 |
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Vishay Siliconix | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | $1.1100 / $2.4000 |
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International Rectifier | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $0.7840 / $2.4000 |
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New Jersey Semiconductor Products Inc | MOSFET Transistor, P-Channel, TO-220AB | $1.7940 / $4.1400 |
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Samsung Electronics Co. Ltd | IN STOCK SHIP TODAY | $1.0000 / $1.5400 |
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Hongxing Electrical Ltd | MOSFET P-CH 200V 1.8A TO-220AB |
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Vishay Huntington | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) | MOSFET P-CH 200V 1.8A TO-220AB | $0.3580 / $0.5370 |
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Thomson Consumer Electronics | Transistor |
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