Part Details for IRF9530N by International Rectifier
Overview of IRF9530N by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF9530N
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 7 | 100 |
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$0.4875 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 80 |
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$0.5000 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 30 |
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$1.8750 / $3.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-220AB | 995 |
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$1.1250 / $3.0000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 79 |
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RFQ | |
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Win Source Electronics | Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) | 317138 |
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$0.2450 / $0.3680 | Buy Now |
Part Details for IRF9530N
IRF9530N CAD Models
IRF9530N Part Data Attributes:
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IRF9530N
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF9530N
International Rectifier
Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
Part Package Code | TO-220AB | |
Package Description | TO-220AB, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 225 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 52 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF9530N
This table gives cross-reference parts and alternative options found for IRF9530N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9530N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF9530NHR | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF9530N vs IRF9530NHR |
IRF9530PBF | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF9530N vs IRF9530PBF |
IRF9530NPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF9530N vs IRF9530NPBF |
IRF9530NPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRF9530N vs IRF9530NPBF |
IRF9530N | Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRF9530N vs IRF9530N |
IRF9530PBF | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF9530N vs IRF9530PBF |
IRF9530 | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF9530N vs IRF9530 |
IRF9530 | Transistor | Vishay Siliconix | IRF9530N vs IRF9530 |
IRF9530 | 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF9530N vs IRF9530 |