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Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7429
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Newark | P Channel Mosfet, -100V, 14A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF9530NPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 642 |
|
$0.3640 / $0.9570 | Buy Now |
DISTI #
IRF9530NPBF-ND
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DigiKey | MOSFET P-CH 100V 14A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
33279 In Stock |
|
$0.3507 / $0.9300 | Buy Now |
DISTI #
IRF9530NPBF
|
Avnet Americas | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF9530NPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.3150 / $0.3850 | Buy Now |
DISTI #
63J7429
|
Avnet Americas | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7429) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 350 Partner Stock |
|
$0.4260 / $0.9670 | Buy Now |
DISTI #
942-IRF9530NPBF
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Mouser Electronics | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC RoHS: Compliant | 54902 |
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$0.3500 / $0.8800 | Buy Now |
DISTI #
V79:2366_27167610
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Arrow Electronics | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Date Code: 2205 | Americas - 10 |
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$0.2913 / $0.4911 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Container: Tube | 15949Tube |
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$0.3450 / $0.4100 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Lead time: 10 Weeks Container: Tube | 7850Tube |
|
$0.3450 / $0.4100 | Buy Now |
DISTI #
80553269
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Verical | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 2000 Package Multiple: 2000 Date Code: 2213 | Americas - 40000 |
|
$0.4018 | Buy Now |
DISTI #
79357122
|
Verical | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 78 Package Multiple: 1 | Americas - 1995 |
|
$0.3438 / $0.4038 | Buy Now |
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IRF9530NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9530NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 79 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF9530NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9530NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF9530NHR | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF9530NPBF vs IRF9530NHR |
IRF9530 | 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF9530NPBF vs IRF9530 |
IRF9530 | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF9530NPBF vs IRF9530 |
IRF9530 | 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF9530NPBF vs IRF9530 |
IRF9530PBF | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF9530NPBF vs IRF9530PBF |
IRF9530N | Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRF9530NPBF vs IRF9530N |
IRF9530NPBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF9530NPBF vs IRF9530NPBF |