Part Details for IRF9130 by Infineon Technologies AG
Overview of IRF9130 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF9130
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | HEXFET STD TO-3, -100V, -11A, 0.300 ohm RoHS: Non Compliant pbFree: No Min Qty: 50 Package Multiple: 1 Container: Bulk | 0Bulk |
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$19.5900 / $20.5700 | Buy Now |
Part Details for IRF9130
IRF9130 CAD Models
IRF9130 Part Data Attributes
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IRF9130
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9130
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-3, 2 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 81 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9130
This table gives cross-reference parts and alternative options found for IRF9130. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9130, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9130 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | IRF9130 vs IRF9130 |
| 2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF9130 vs 2N6804 |
| JANTX2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IRF9130 vs JANTX2N6804 |
| IRF9130 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | IRF9130 vs IRF9130 |
| JAN2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, METAL CAN, TO-3, 2 PIN | Microsemi Corporation | IRF9130 vs JAN2N6804 |
| IRF9130-QR-B | 11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF9130 vs IRF9130-QR-B |
| IRF9130-QR-B | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | IRF9130 vs IRF9130-QR-B |
| 2N6804 | 11A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | IRF9130 vs 2N6804 |
| IRF9130-QR-BR1 | 11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF9130 vs IRF9130-QR-BR1 |
| IRF9130 | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF9130 vs IRF9130 |