Infineon Technologies AG |
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
$19.5900 / $20.5700
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International Rectifier |
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
$14.8000 / $22.0396
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ELMOS SEMICONDUCTOR AG |
MOSFET Transistor, P-Channel, TO-204AA |
$12.0000 / $16.0000
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Hitachi Ltd |
MOSFET Transistor, P-Channel, TO-204AA |
$16.0000 / $18.0000
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TT Electronics Power and Hybrid / Semelab Limited |
11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN |
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Samsung Semiconductor |
Transistor |
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Thomson Consumer Electronics |
Transistor |
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TT Electronics Resistors |
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN |
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Intersil Corporation |
12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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Rochester Electronics LLC |
11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
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Harris Semiconductor |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
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