Part Details for IRF7468 by International Rectifier
Overview of IRF7468 by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IRF7468
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, SO | 178 |
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$0.4830 / $1.0350 | Buy Now |
Part Details for IRF7468
IRF7468 CAD Models
IRF7468 Part Data Attributes
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IRF7468
International Rectifier
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Datasheet
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IRF7468
International Rectifier
Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 9.4 A | |
| Drain-source On Resistance-Max | 0.0155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7468
This table gives cross-reference parts and alternative options found for IRF7468. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7468, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7468PBF | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7468 vs IRF7468PBF |
| IRF7468TR | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7468 vs IRF7468TR |
| IRF7468TRPBF | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7468 vs IRF7468TRPBF |
| IRF7468TR | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7468 vs IRF7468TR |
| IRF7468PBF | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7468 vs IRF7468PBF |
| IRF7468TRPBF | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7468 vs IRF7468TRPBF |
| IRF7468 | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7468 vs IRF7468 |