| Harris Semiconductor |
Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.8288 / $4.2000
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| International Rectifier |
Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Intersil Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,10A I(D),TO-220AB |
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$1.0800 / $4.2000
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| STMicroelectronics |
10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
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| Motorola Mobility LLC |
10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Rochester Electronics LLC |
10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| FCI Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Texas Instruments |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,10A I(D),TO-220AB |
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| National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,10A I(D),TO-220AB |
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| TT Electronics Power and Hybrid / Semelab Limited |
10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,10A I(D),TO-220AB |
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| General Electric Solid State |
Transistor |
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| Samsung Semiconductor |
Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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