There are no models available for this part yet.
Overview of IRF6618PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 5 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 6 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF6618PBF by International Rectifier
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Quest Components | POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.0022OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1644 |
|
$5.1269 / $10.2537 | Buy Now |
CAD Models for IRF6618PBF by International Rectifier
Part Data Attributes for IRF6618PBF by International Rectifier
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
|
Package Description
|
ROHS COMPLIANT, MT, ISOMETRIC-3
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Avalanche Energy Rating (Eas)
|
210 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
30 A
|
|
Drain-source On Resistance-Max
|
0.0022 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-XBCC-N3
|
|
JESD-609 Code
|
e4
|
|
Moisture Sensitivity Level
|
3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
UNSPECIFIED
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
CHIP CARRIER
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
89 W
|
|
Pulsed Drain Current-Max (IDM)
|
240 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
SILVER NICKEL
|
|
Terminal Form
|
NO LEAD
|
|
Terminal Position
|
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRF6618PBF
This table gives cross-reference parts and alternative options found for IRF6618PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6618PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6618TRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3 | International Rectifier | IRF6618PBF vs IRF6618TRPBF |
| IRF6618TR1 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6618PBF vs IRF6618TR1 |
| IRF6618TR1PBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6618PBF vs IRF6618TR1PBF |
| IRF6618TRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3 | Infineon Technologies AG | IRF6618PBF vs IRF6618TRPBF |
| IRF6618 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | Infineon Technologies AG | IRF6618PBF vs IRF6618 |